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标 题 |
更新时间 |
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ABB GTO二极管5SGA 20H2501
Gate turn-off Thyristor5SGA 20H2501VDRM= 2500 VITGQM= 2000 AITSM=16 kAVT0=1.66 VrT=0.57 mWVDClin= 1400 V专利自由漂浮硅技
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2024-11-19 |
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ABB GTO二极管5SGA 15F2502
Asymmetric Gate turn-offThyristor5SGA 15F2502VDRM=2500 VITGQM=1500 AITSM= 10103AVT0=1.45 VrT=0.90 mWVDclink=1400 V 专利
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2024-11-19 |
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ABB IGBT模块5SNA1000G650300
供应ABB高压IGBT模块5SNA1000G6503005SNA 1000G650300HiPak IGBT moduleVCE = 6500 VIC = 1000 A超低损耗、坚固耐用的SPT++芯片
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2024-11-19 |
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ABB IGBT模块5SNA0750G650300
ABB IGBT模块5SNA0750G650300ABB HiPakIGBT Module5SNA 0750G650300VCE = 6500 VIC = 750 A低损耗、坚固耐用的SPT芯片组平滑切换
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2024-11-19 |
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ABB IGBT模块5SNA0600G650100
ABB HiPakTMIGBT Module5SNA 0600G650100VCE = 6500 VIC = 600 A低损耗、坚固耐用的SPT芯片组平滑切换SPT芯片组，电磁兼容性好高
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2024-11-19 |
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ABB IGBT模块5SNA0600G650100
ABB IGBT模块5SNA0600G650100ABB HiPakTMIGBT Module5SNA 0600G650100VCE = 6500 VIC = 600 A低损耗、坚固耐用的SPT芯片组平滑切
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2024-11-14 |
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ABB IGBT模块5SNA0500J650300
5SNA 0500J650300HiPak IGBT ModuleVCE = 6500 VIC = 500 A超低损耗、坚固耐用的SPT+芯片组平滑切换SPT+芯片组，实现良好的EMC高
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2024-11-14 |
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ABB IGBT模块5SNA0400J650100
ABB HiPakIGBT Module5SNA 0400J650100VCE = 6500 VI = 400 A低损耗、坚固耐用的SPT芯片组平滑切换SPT芯片组，电磁兼容性好高绝
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2024-11-14 |
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